6
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP41KHR6 MRF6VP41KHSR6
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
1
100
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
100
TJ
= 200°C
TJ
= 175°C
TJ
= 150°C
Note:
Each side of device measured separately.
21
1
0
80
10
18
16
14
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
17
15
13
1000 2000
Gps
20
19
20
100
10
VDD
=50Vdc
IDQ
= 150 mA
f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
55
65
34
63
62
61
Pin, INPUT POWER (dBm) PEAK
Figure 7. Output Power versus Input Power
64
60
44
59
58
57
35 36 37 38 39 40 41 42
P
out
, OUTPUT POWER (dBm)
P3dB = 60.70 dBm (1174.89 W)
Actual
Ideal
P1dB = 60.33 dBm (1078.94 W)
56
43
VDD
=50Vdc
IDQ
= 150 mA
f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
17
23
10
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
100
18
IDQ
= 6000 mA
1000 2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
21
22
VDD
=50Vdc
f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
G
ps
, POWER GAIN (dB)
VDD
=30V
12
22
0
16
35 V
20
45 V
200 400 600 800 1000 1200 1400
50 V
40 V
14
18
IDQ
= 150 mA, f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
Note:
Each side of device measured separately.
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